CGHV96100F2 - 100-W, 7.9 – 9.6-GHz, 50-ohm

CGHV96100F2 - 100-W, 7.9 – 9.6-GHz, 50-ohm
Id number: 16577
Category: Sell > Products
Publication date: 29.07.2018
Modification date: 30.07.2018
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CGHV96100F2 - 100-W, 7.9 – 9.6-GHz, 50-ohm

New and Original, Ready to ship (300 pcs), Available in warehouse out of US, ITAR Free and not need License Export for customer (My company filled license export and got it from US and Cree for project, these quantity is extra for my needs, so I can easily ship to customers)
Email: emission.alex.kosh at ,

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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